unisonic technologies co., ltd 2sb798 p np epitaxial silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r208-020.b power transistor ? description the utc 2sb798 is designed for audio frequency power amplifier applications, especially in hybrid integrated circuits. ? features * low collector saturation voltage: v ce(sat) < -0.4v (ic = -1.0a, i b = -100ma ) * excellent dc current gain linearity : h fe = 100 typ. (v ce = -1.0v, i c = -1.0a) sot-89 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 2sb798l-x-ab3-r 2SB798G-X-AB3-R sot-89 b c e tape reel 2sb798l-x-ab3-r (1)packing type (2)package type (1) r: tape reel (2) ab3: sot-89 (3) x: refer to classification of h fe1 (3)rank (4)lead free (4) halogen free, l: lead free
2sb798 p np epitaxial silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r208-020.b ? absolute maximum ratings (t a =25 c) parameter symbol ratings unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5.0 v dc -1.0 a collector current pulse(note 1) i c -1.5 a collector dissipation (note 2) p c 2 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 1. pw Q 10ms,duty cycle Q 50% 2. when mounted on a ceramic substrate of 16cm 2 0.7 mm. ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb = -30v , i e = 0 -100 na emitter cut-off current i ebo v eb = -5.0v, i c = 0 -100 na dc current gain h fe1 v ce = -1.0v, i c = -100ma 90 200 400 dc current gain h fe2 v ce = -1.0v, i c = -1.0a 50 100 base to emitter voltage v be v ce = -6.0v, i c = -10ma -600 -640 -700 mv collector-emitte r saturation voltage v ce(sat) i c = -1.0a, i b = -0.10a -0.25 -0.40 v base-emitter satura tion voltage v be(sat) i c = -1.0a, i b = -0.10a -1.0 -1.2 v gain bandwidth product f t v ce = -6.0v, i e = 10ma 110 mhz output capacitance c ob v cb = -6.0v, i e = 0, f=1mhz 36 pf note: 3. pw Q 350 s, duty cycle Q 2% ? classification of hfe1 marking dm dl dk hfe1 90-180 135-270 200-400
2sb798 p np epitaxial silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r208-020.b ? typical characteristics 0100 1.0 ambient temperature, ta ( ) collector dissipation vs. ambient temperature 150 0.5 50 200 250 0 1.5 2.0 2.5 -0.4 -0.6 -20 collector current vs. base to emitter voltage -0.7 -5 -10 -50 -2 -0.5 -0.8 -0.9 -1 -100 -200 -500 -1000 base to emitter voltage, v be (v) -1.0 when mounted on a ceramic substrate of 16cm 2 *0.7mm v ce =-0.6v pulsde collector current, i c (ma) collector current, i c (ma) -1 -5 50 dc current gain vs.collector current dc current gain, h fe -10 20 -2 -20 -50 10 100 200 collector current, i c (a) -100-200 500 1000 -500 -1 -2 -5 -0.05 collector and base saturation voltage vs. collector current base saturation voltage, v be(sat) (v) collector saturation voltage, v ce(sat) (v) -0.02 -0.01 -0.1 -0.2 collector current, i c (a) -0.5 -1 -2 -5 -10 v ce =1.0v pulsed ta=75 ta=-25 ta=25 i c =10*i b v be (sat) v ce (sat)
2sb798 p np epitaxial silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r208-020.b 15 50 gain bandwidth product vs. emitter current gain bandwidth product, f t (mhz) 10 20 220 10 100 200 emitter current, i e (ma) 500 1000 50100 200500 1000 -0.1 -0.5 5 output capacitance v s . collector to base voltage output capacitance, c ob (pf) -1 2 -0.2 -2 1 10 20 collector to base voltage, v cb (v) 50 100 -5 -10 -20 -50-100 v ce =-1.0v v ce =-6.0v i e =0 f=1.0mhz utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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